advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v fast switching characteristic r ds(on) 135m low gate charge i d 3a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 201503091 1 AP10TN135M halogen-free product parameter rating drain-source voltage 100 gate-source voltage + 20 drain current, v gs @ 10v 3 3 drain current, v gs @ 10v 3 2.2 pulsed drain current 1 12 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range ap10tn135 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. g d s s s s g d d d d so-8 .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - 112 135 m v gs =4.5v, i d =2a - 120 145 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.7 3 v g fs forward transconductance v ds =5v, i d =3a - 11 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =3a - 12 20 nc q gs gate-source charge v ds =80v - 2.2 - nc q gd gate-drain ("miller") charge v gs =10v - 2.5 - nc t d(on) turn-on delay time v ds =50v - 7 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 ? -16- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 610 980 pf c oss output capacitance v ds =25v - 40 - pf c rss reverse transfer capacitance f=1.0mhz - 25 - pf r g gate resistance f=1.0mhz - 2.2 4.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =3a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 23 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP10TN135M 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. .
AP10TN135M fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 8.0v 6.0v 5.0v 4.0v v g = 3.0v 0 2 4 6 8 10 02468 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 8.0v 6.0v 5.0v 4.0v v g = 3.0v t a = 150 o c 110 114 118 122 126 130 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g =10v 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =1ma .
AP10TN135M fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm t t 0.02 duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 /w 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 03691215 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =80v 0 200 400 600 800 1000 0 20 40 60 80 100 120 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 5 10 15 20 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 1 2 3 4 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) operation in this area limited by r ds(on) .
ap10tn135 m fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 0.8 1.6 2.4 3.2 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma 100 120 140 160 180 200 036912 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v .
AP10TN135M marking information 6 10tn135 ywwsss part numbe r date code (ywwsss) y last digit of the year ww week sss sequence package code .
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